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C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness: Ha-Wuk Sung, Seong-Hee Han, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim, Dong-Wook Kim; J. Electromagn. Eng. Sci. 2022;22(6):678-685. Published online November 30, 2022; DOI: https://doi.org/10.26866/jees.2022.6.r.137
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Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs: Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim; J. Electromagn. Eng. Sci. 2022;22(3):291-295. Published online May 31, 2022; DOI: https://doi.org/10.26866/jees.2022.3.r.89
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A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology: Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim; J. Electromagn. Eng. Sci. 2017;17(4):178-180. Published online October 31, 2017; DOI: https://doi.org/10.26866/jees.2017.17.4.178
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