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A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
J. Electromagn. Eng. Sci. 2017;17(4):178-180. Published online 2017 Oct 31 DOI: https://doi.org/10.26866/jees.2017.17.4.178
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Citations to this article as recorded by
 A broadband RLC matched GaN power amplifier using interposer‐MMIC technology
Hong‐Sun Yoon, Jong‐Min Yook, Jun C. Kim, Youngcheol Park, Dongsu Kim
Microwave and Optical Technology Letters.2020; 62(5): 1976. CrossRef A novel model of avalanche current generation in the GaN HEMT equivalent circuit
Gennadiy Z. Garber
Journal of Computational Electronics.2020; 19(2): 677. CrossRef A High-Performance GaN-Modified Nonuniform Distributed Power Amplifier
Jihoon Kim, Youngwoo Kwon
IEEE Transactions on Microwave Theory and Techniqu.2020; 68(5): 1729. CrossRef Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation
Dongmin Keum, Hyungtak Kim
ECS Journal of Solid State Science and Technology.2018; 7(9): Q159. CrossRef Design and realization of low-cost 10 W power amplifier module at 7.9–8.4 GHz
Chi-Hyung Ahn, Younghoon Kim, Sungwon Oh, Yeonjun Noh, Dong-Ho Lee, Sanghun Lee, Kunhee Cho, Jusung Kim
IEICE Electronics Express.2018; 15(19): 20180775. CrossRef
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