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J. Electromagn. Eng. Sci > Volume 26(1); 2026 > Article
Kim: Power Divider Based on Broadside Slot-Coupled Lines

Abstract

This paper proposes a power divider composed of a broadside slot-coupled line with microstrips located on the top and bottom surfaces, a ground plane slot at the center, and a resistor for improved isolation. Two- and four-way dividers are designed based on this structure. The broadside slot-coupled lines are designed based on interpretations of equal, unequal two-way, and equal four-way dividers using the scattering parameter technique. The proposed structure allows for a compact footprint and enhanced isolation performance, making it well suited for integrated system design based on multilayer PCB technology. The design method is validated by simulating and fabricating three types of power dividers, with the operating frequency being 2 GHz. The measurement results of the fabricated power dividers are found to be in good agreement with the simulation results.

I. Introduction

A power divider is a passive component that plays an integral role in radio frequency (RF) and microwave systems. Commonly used power dividers include the Wilkinson power divider [13], which is employed for low-power operations, and the Gysel divider [4, 5], which is used for high-power applications. Notably, power dividers are frequently used in amplifiers [6] and antenna feeders [7]. Most power dividers that use conventional coupled transmission lines are fabricated using a method that involves quarter-wavelength transmission lines and edge coupling. However, this method requires maintaining sufficient spacing between the coupled transmission lines, which is difficult to achieve with microstrip technology and often requires a gap of several hundred micrometers, making fabrication challenging in most cases.
Power dividers using coupled transmission lines have been the subject of extensive research, with researchers proposing wideband filtering power dividers with open or short stubs [911], power dividers using multi-conductor coupled lines [12, 13], compact wideband unequal in-phase power dividers [14], and power dividers with three unequal-width coupled lines [15]. Nonetheless, power dividers characterized by these couplers share a common challenge—the thin line width and narrow gap between coupled transmission lines prevents easy fabrication.
This study proposes a power divider composed of a broadside slot-coupled line with microstrip lines facing each other on the top and bottom surfaces and a slotted ground plane in the middle. Fig. 1 depicts the 3D structure of the power divider developed based on this configuration. The proposed approach helps realize the desired coupling coefficient, thereby addressing issues related to line width and gap spacing of the coupled lines. Drawing upon this structure, two- and four-way power dividers were designed at a center frequency of 2 GHz, and their performances were verified based on the S-parameter characteristics for power splitting, input matching, output matching, and isolation.

II. Theory

Fig. 2 depicts a schematic of the proposed power divider based on broadside slot-coupled lines. The Z-parameters of the coupled line constituting the power divider can be formulated as follows:
(1)
(V1V2V3V4)=(Z11Z12Z13Z14Z21Z22Z23Z24Z31Z32Z33Z34Z41Z42Z43Z44)(I1I2I3I4)
where the matrix elements can be expressed as follows:
Z11=Z22=Z33=Z44=-j(Zoe+Zoo2)cotθZ12=Z21=Z34=Z43=-j(Zoe-Zoo2)cotθZ13=Z31=Z24=Z42=-j(Zoe-Zoo2)cscθZ14=Z42=Z23=Z32=-j(Zoe+Zoo2)cscθ

1. Two-Way Power Divider

Since a two-way power divider is characterized by different power division ratios, it should be analyzed using the scattering parameter method rather than conventional even-odd mode analysis. When Port 1 of the power divider is excited and the power division ratio between Ports 2 and 3 is k2( = P3/P2), the same voltage appears at Ports 2 and 3, resulting in no current flow between them. The equivalent circuit pertaining to this condition is illustrated in Fig. 3(a). In addition, the equivalent circuit when Port 2 is excited is shown in Fig. 3(b). Notably, isolation can be determined from this circuit.
By applying conditions I2 = 0, I4 = 0 to Eq. (1) considering the equivalent circuit depicted in Fig. 3(a) pertaining to Port 1 excitation, the equation can be rewritten as follows:
(2)
(V1V3)=(Z11Z13Z31Z33)(I1I3)
Furthermore, by converting the Z-parameters in Eq. (2) into S-parameters, the conditions for matching and power splitting in the case of Port 1 excitation were obtained as follows:
(3)
S11e2=(Z11-Zin1k)(Z33+Zo)-Z13Z31Δz
(4)
S21e=2Zin1kZoZ31Δz
(5)
S22e=(Z11+Zin1k)(Z33-Zo)-Z13Z31Δz
where Zin1k (k = 2, 3), while the ΔZ parameters can be expressed as Zin12 = (1 + k2)Zo, Zin13 = [(1 + k2)/k2] · Zo, and ΔZ = (Z11 + Zin1k) (Z33 + Zo) − Z13Z31. By substituting the same conditions into Ports 1 and 3 considering Port 1 excitation, S11e3, S31e, and S33e were obtained.
To calculate the isolation between Ports 2 and 3, the equivalent circuit depicted in Fig. 3(b) was employed. By substituting the conditions I2a + I2b = 0, I4 =, V1a = V1b = −Z0(I1a + I1b), and V2a-V2bRiso=I2b=-I2a into this circuit, the impedance parameter between Ports 2 and 3 was derived as follows:
(6)
(V3aV3b)=(Z11aZ12aZ21aZ22a)(I3aI3b)
where
Z11a=-Z32aZ23aRisaZ12a=-Z31aZ13b2Z0+Z32aZ23bRisoZ21a=-Z31bZ13a2Z0+Z32bZ23aRisoZ22a=-Z32bZ23bRisa
Upon converting the elements in Eq. (6) into their S-parameters, the resulting S21iso was observed to correspond to the isolation between Ports 2 and 3. Furthermore, drawing on Eqs. (3)(6), the S-parameters of the proposed power divider can be expressed as follows:
(7a)
S11=S11e2+S11e32
(7b)
S21=S21e,   S31=S31e
(7c)
S22=S22e,   S33=S33e
(7d)
S23=S21iso
In addition, the S-parameters of the proposed power divider were obtained based on the following conditions:
Reflection characteristics:
(8)
S1115dB,         S2215dB,         S3315dB
Coupling characteristics:
(9)
S2120log(k1+k2)dB,         S3120log(k1+k2)dB
Isolation characteristics:
(10)
S3220dB
The even and odd impedances of the coupled lines were set to ZooZoe, and their electrical lengths were set to θ = 90°. The coupled line’s impedance values Zoe, Zoo and the isolation resistance value Riso that satisfies the design conditions of the proposed power divider were determined using reflection and transmission coefficient equations through scattering parameter analysis.

2. Four-Way Power Divider

The four-way power divider, as shown in Fig. 2(b), was designed based on the same conceptualization as the two-way power divider described above. The structure of this power divider was configured by changing the impedance of Port 1 of the two-way power divider into 2Zo owing to the 1:1:1:1 splitting ratio output. In addition, resistance Ri in Fig. 2(b) denotes an isolation resistor that satisfies the isolation between the two two-way power dividers. Its value was obtained using scattering parameter analysis.
We employed MATLAB 2015b to determine the impedance values Zoe, Zoo of the two- and four-way power dividers, as well as to calculate the isolation resistance values Riso and Ri that satisfy Eqs. (8)(10).
The even and odd impedances of the broadside slot-coupled line can be expressed as Eqs. (11) and (12), with the microstrip width (Wm) and slot width (Ws) being the variables [16]:
(11a)
Zoe=60πɛrK(k1)K(k1)
(11b)
Zoo=60πɛrK(k2)K(k2)
Here, K(k) is the first-order elliptic integral, expressed as K'(k)=K(1-k2). Additionally, k1 and k2 are expressed as follows:
(12a)
k1=sinh2(πWs/4h)sinh2(πWs/4h)+cosh2(πWm/4h)
(12b)
k2=tanh (πWm/4h)

III. Simulation and Experimental Results

To confirm the validity of the proposed design method, a two-way power divider with splitting ratios of 1:1 and 1:2, and a four-way power divider with a splitting ratio of 1:1:1:1 were fabricated considering an operating frequency of 2 GHz.
The dividers were fabricated on an RO-4350B substrate with a dielectric constant of ɛr = 3.48, dielectric thickness of h = 0.762 mm, and copper thickness of t = 0.035 mm. Simulations were performed using Microwave Office (version 17), developed by Cadence. The electrical lengths, even and odd impedance values of the coupled line, and isolation resistance of the proposed power divider were calculated using the equations noted in Section II.
The width of microstrip lines and slots for fabricating the broadside slot-coupled line were also obtained using the corresponding equations in Section II. Table 1 summarizes the width and length of microstrip lines and slots of the broadside slot-coupled line employed in the proposed power divider. Notably, the width and length of the broadside slot-coupled line represent the results of an optimization process conducted to identify the values that satisfy the electrical characteristics of the power divider.
Fig. 4(a) and 4(b) present photographs of the front and rear views of the 1:1 power divider, respectively. Transmission line fabrication for this power divider was conducted following an optimal process for achieving power divider characteristics. In addition, an isolation resistor—a 180 Ω Murata product—is also used. Fig. 4(c) and 4(d) show the measured and simulated S-parameters of the power divider with a 1:1 split ratio, respectively. The figures show insertion losses of |S21| = −3.42 dB and |S31| = −3.40 dB. The isolation |S32| exceeds 20 dB. The input return loss |S11| is more than 15 dB, and the output return losses |S22| and |S33| are more than 15 dB at the operating frequency of 2 GHz.
Fig. 5(a) and 5(b) show photographs of the front and rear views of the 1:2 power divider. Here, too, transmission line fabrication was conducted through an optimal process for achieving power divider characteristics. In addition, the isolation resistor employed is a 192 Ω Murata product. Fig. 5(c) and 5(d) show the measured and simulated S-parameters of the power divider with a 1:2 split ratio, respectively. The figures show insertion losses of |S21| = −2.37 dB and |S31| = −5.06 dB, the isolation |S32| exceeds 20 dB, the input return loss |S11| is greater than 15 dB, and the output return losses |S22| and |S33| are greater than 15 dB at the operating frequency of 2 GHz.
Finally, Fig. 6(a) and 6(b) show photographs of the front and rear views of the 1:1:1:1 four-way power divider. The fabrication of the transmission line constituting the power divider was conducted by following an optimal process for achieving power divider characteristics. In addition, the isolation resistors Riso and Ri employed in this configuration are 100 Ω and 50 Ω Murata products. Fig. 6(c)–6(f) present the measured and simulated S-parameters of the proposed four-way power divider with a 1:1:1:1 split ratio. The figures show insertion losses of |S21| = −6.55 dB, |S31| = −6.56 dB, |S41| = −6.55 dB, and |S51| = −6.71 dB. Furthermore, the isolation of |S32|, |S42|, |S52|, |S43|, |S53|, and |S54| exceed 20 dB. The input return loss |S11| is higher than 15 dB, and output return losses |S22|, |S33|, |S44|, and |S55| are higher than 15 dB at the operating frequency of 2 GHz. Table 2 presents a comparison of the proposed power divider with conventional power dividers equipped with microstrip coupled lines.

IV. Conclusion

This study presents three power divider designs that feature broadside slot-coupled lines. The structures of the proposed dividers are characterized by microstrips placed on the top and bottom surfaces of the slot-coupled line and slots located on the ground surface in the middle. This configuration made it easy to achieve a high coupling coefficient, thereby simplifying the fabrication process of the power dividers. This structure also offers a compact design and improved isolation, which makes it suitable for integrated system designs using multilayer PCBs. The measured results of the fabricated two- and four-way power dividers at an operating frequency of 2 GHz were satisfactory, achieving a splitting ratio within the tolerance level of the theoretical designed value, a reflection coefficient of 15 dB or higher, and an isolation of 20 dB or higher.

Fig. 1
A 3D configuration of the proposed power divider based on broadside slot-coupled lines.
jees-2026-1-r-344f1.jpg
Fig. 2
Schematic of the proposed power divider based on broadside slot-coupled lines: (a) two-way and (b) four-way.
jees-2026-1-r-344f2.jpg
Fig. 3
Equivalent circuits of the proposed power divider: (a) Port 1 excitation and (b) Port 2 excitation.
jees-2026-1-r-344f3.jpg
Fig. 4
Photographs, measured S-parameter, and simulated S-parameter characteristics of the proposed 1:1 two-way equal power divider: (a) front view, (b) rear view, and (c) |S11|, |S21|, and |S31|, and (d) |S32|, |S22|, and |S33|.
jees-2026-1-r-344f4.jpg
Fig. 5
Photographs, measured S-parameter, and simulated S-parameter characteristics of the proposed 1:2 two-way unequal power divider: (a) front view, (b) rear view, (c) |S11|, |S21|, and |S31|, and (d) |S32|, |S22|, and |S33|.
jees-2026-1-r-344f5.jpg
Fig. 6
Photographs, measured S-parameter, and simulated S-parameter characteristics of the proposed 1:1:1:1 four-way equal power divider: (a) front view, (b) rear view, (c) |S11|, |S21|, |S31|, |S41|, and |S51|, (d) |S32|, |S42|, and |S52|, (e) |S43|, |S53|, and |S54|, and (f) |S22|, |S33|, |S44|, and |S55|.
jees-2026-1-r-344f6.jpg
Table 1
Calculated dimensions of the width and length of the microstrip lines and slots of the proposed power divider’s broadside slot-coupled line (unit: mm)
h 1:1 PD 1:2 PD 1:1:1:1 PD



Width Length Width Length Width Length
Wm 1.7 - 1.7 - 1.7 -
WPF/LPF 7.17 22.7 4.87 22.7 5.37 22.3
WPR1/LPR1 2.27 22.7 2.27 22.7 2.27 22.3
WPR2/LPR2 2.27 22.7 3.17 22.7 2.27 22.3
Ws1/Ls1 5.74 22.7 4.7 22.7 9.45 22.3
Ws2/Ls2 5.74 22.7 7.2 22.7 9.45 22.3
Table 2
Comparison of the proposed power divider with conventional dividers that use coupled lines
fo (GHz) IL (dB) RL (dB) ISO (dB) BW (%) Size (λg2) Design technology
Liu et al. [8] 1.5 0.8 14.2 15 80 0.159 Three-coupled line
Song et al. [9] 1.1 0.48 10 12 50 0.088 Three-coupled line
Chen and Ho [10] 1.0 0.8 15 20 10 0.051 Three-coupled line
Chiu et al. [12] 2.5 0.2 20 17.5 96 0.003 Three-coupled line
Zhu et al. [14] 7 0.6 12 13 114 0.022 Three-coupled line
This work 2 0.5 15 20 65 0.038 Broadside slot-coupled line

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Biography

jees-2026-1-r-344i1.jpg
Young Kim, https://orcid.org/0000-0002-5924-1090, received his B.S., M.S., and Ph.D. degrees in electronics engineering from Sogang University, Seoul, South Korea, in 1986, 1988, and 2002, respectively. During the period from 1993 to 2002, he developed cellular and personal communication system (PCS) linear power amplifiers at Samsung Electronics Co., Ltd. In 2003, he joined the School of Electronics Engineering, Kumoh National Institute of Technology, Gumi, South Korea, where he is currently a professor. His areas of interest are the design of high-power amplifiers, linearization techniques, and RF and microwave circuit analysis and design.
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