| A 1.8 GHz SiGe HBT VCO using 0.5μm BiCMOS Process |
|
Ja-Yol Lee1, Sang-Heung Lee1, Jin-Young Kang1, Kyu-Hwan Shim1, Kyoung-Ik Cho1, Seung-Hyeub Oh2 |
1SiGe Device Teams, ETRI
2Dept. of Electronics Enigeering, Chungnam National University |
|
|
|
|
| Abstract |
|
In this paper, we fabricated an 1.8 ㎓ differential VCO using a commercial 0.5 ${mu}{textrm}{m}$ SiGe BiCMOS process technology, The fabricated VCO consumes 16 ㎃ at 3 V supply voltage and has a 1.2 $times$ 1.6 $mm^2$TEX>chip area. A phase noise measured at 100 KHz offset carrier is -110 ㏈c/Hz and a tuning range is 1795 MHz~1910 MHz when two varactor diodes are biased from 0 V to 3 V. |
| Key words:
SiGe, BiCMOS, VCO, Phase Noise, Flicker Noise |
|
PDF Links
Full text via DOI
Download Citation
