 |
 |
Search
- Page Path
-
- HOME
- Search
- Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy
- Junwoo Jung, Jong-Min Lee, Byoung-Gue Min, Dong Min Kang, Inho Kang, Hyungtak Kim
- J. Electromagn. Eng. Sci. 2025;25(2):184-189. Published online December 13, 2024
-
Full text 
PubReader 
ePub 
PDF
- Bandwidth Extension of the Doherty Power Amplifier Using the Impedance Distribution and Control Circuit for the Post-Matching Network
- Seungmin Woo, Woojin Choi, Jaekyung Shin, Yifei Chen, Youngchan Choi, Sooncheol Bae, Hyungjin Jeon, Youngyun Woo, Youngoo Yang
- J. Electromagn. Eng. Sci. 2024;24(4):401-410. Published online July 31, 2024
-
Full text PubReader ePub PDF
- C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness
- Ha-Wuk Sung, Seong-Hee Han, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim, Dong-Wook Kim
- J. Electromagn. Eng. Sci. 2022;22(6):678-685. Published online November 30, 2022
-
Full text PubReader ePub PDF
- Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
- Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim
- J. Electromagn. Eng. Sci. 2022;22(3):291-295. Published online May 31, 2022
-
Full text PubReader ePub PDF
- A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
- Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
- J. Electromagn. Eng. Sci. 2017;17(4):178-180. Published online October 31, 2017
-
Full text PubReader ePub PDF
- Editorial Office
-
#706 Totoo Valley, 217 Saechang-ro, Yongsan-gu, Seoul 04376, Korea
Tel: +82-2-337-9666 Fax: +82-2-6390-7550 E-mail: admin-jees@kiees.or.kr
Copyright © 2025 by The Korean Institute of Electromagnetic Engineering and Science.
