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GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications: Jun-Chul Park, Dong-Su Kim, Chan-Sei Yoo, Woo-Sung Lee, Jong-Gwan Yook, Sang-Hyun Chun, Jong-Heon Kim, Cheol-Koo Hahn; J. Electromagn. Eng. Sci. 2011;11(1):16-26.; DOI: https://doi.org/10.5515/JKIEES.2011.11.1.016
Crossref 4; PDF

Design of Dualband Class-F PAs for Cellular and WLAN Applications: Chang-Min Lee, Young-Cheol Park, Hoi-Jin Yoon; J. Electromagn. Eng. Sci. 2010;10(1):6-12.; DOI: https://doi.org/10.5515/JKIEES.2010.10.1.006; PDF

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs: Young-Min Kim, Yu-Min Koh, Young-Rak Park, Si-Young Lee, Kwang-Seok Seo, Young-Woo Kwon; J. Electromagn. Eng. Sci. 2009;9(4):218-222.; DOI: https://doi.org/10.5515/JKIEES.2009.9.4.218; PDF

A Novel Digital Feedback Predistortion Technique with Memory Lookup Table: Jung-Hwan Moon, Jang-Heon Kim, Bum-Man Kim; J. Electromagn. Eng. Sci. 2009;9(3):152-158.; DOI: https://doi.org/10.5515/JKIEES.2009.9.3.152
Crossref 1; PDF

Effects of Drain Bias on Memory-Compensated Analog Predistortion Power Amplifier for WCDMA Repeater Applications: Yong-Sub Lee, Mun-Woo Lee, Sang-Ho Kam, Yoon-Ha Jeong; J. Electromagn. Eng. Sci. 2009;9(2):78-84.; DOI: https://doi.org/10.5515/JKIEES.2009.9.2.078; PDF

Class-E CMOS PAs for GSM Applications: Hong-Tak Lee, Yu-Mi Lee, Chang-Kun Park, Song-Cheol Hong; J. Electromagn. Eng. Sci. 2009;9(1):32-38.; DOI: https://doi.org/10.5515/JKIEES.2009.9.1.032; PDF

A 0.18-μm CMOS UWB LNA Combined with High-Pass-Filter: Jeong-Yeon Kim, Chang-Wan Kim; J. Electromagn. Eng. Sci. 2009;9(1):7-11.; DOI: https://doi.org/10.5515/JKIEES.2009.9.1.007; PDF

A 3~5 GHz UWB Up-Mixer Block Using 0.18-μm CMOS Technology: Chang-Wan Kim; J. Electromagn. Eng. Sci. 2008;8(3):91-95.; DOI: https://doi.org/10.5515/JKIEES.2008.8.3.091; PDF

A MB-OFDM UWB 0.18-μm CMOS RF Front-End Receiver: Chang-Wan Kim; J. Electromagn. Eng. Sci. 2008;8(1):34-40.; DOI: https://doi.org/10.5515/JKIEES.2008.8.1.034
Crossref 1; PDF

Improving the Linearity of CMOS LNA Using the Post IM3 Compensator: Jin-Gook Kim, Chang-Joon Park, Hui-Jung Kim, Bum-Man Kim, Young-Sik Kim; J. Electromagn. Eng. Sci. 2007;7(2):91-95.; DOI: https://doi.org/10.5515/JKIEES.2007.7.2.091; PDF

An Ultra Wideband Low Noise Amplifier in 0.18 μm RF CMOS Technology: Ji-Hak Jung, Tae-Yeoul Yun, Jae-Hoon Choi; J. Electromagn. Eng. Sci. 2005;5(3):112-116.; PDF

Full-Wave Analysis of Microwave Amplifiers with Nonlinear Device by the FDTD Algorithm: Hee-Jin Kang, Jae-Hoon Park; J. Electromagn. Eng. Sci. 2002;2(2):81-86.; PDF

The Design of SiGe HBT LNA for IMT-2000 Mobile Application: Jei-Young Lee, Geun-Ho Lee, Guofu Niu, John D. Cressler, J.H. Kim, J.C. Lee, B. Lee, N.Y. Kim; J. Electromagn. Eng. Sci. 2002;2(1):22-27.; PDF

Performance Comparison between Inverse Class-F and Class-F Amplifiers Based on the Waveform Analysis: Youn-goo Yang, Young-Yun Woo, Bum-man Kim; J. Electromagn. Eng. Sci. 2002;2(1):5-10.; PDF

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