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A Parallel Coupled QVCO and Differential Injection-Locked Frequency Divider in 0.13 μm CMOS: Bong-Hyuk Park, Kwang-Chun Lee; J. Electromagn. Eng. Sci. 2010;10(1):35-38.; DOI: https://doi.org/10.5515/JKIEES.2010.10.1.035; PDF

Gain and Phase Mismatch Calibration Technique in Image-Reject RF Receiver: Mi-Young Lee, Chang-Sik Yoo; J. Electromagn. Eng. Sci. 2010;10(1):25-27.; DOI: https://doi.org/10.5515/JKIEES.2010.10.1.025
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Class-E CMOS PAs for GSM Applications: Hong-Tak Lee, Yu-Mi Lee, Chang-Kun Park, Song-Cheol Hong; J. Electromagn. Eng. Sci. 2009;9(1):32-38.; DOI: https://doi.org/10.5515/JKIEES.2009.9.1.032; PDF

Design Issues of CMOS VCO for RF Transceivers: Seong-Han Ryu; J. Electromagn. Eng. Sci. 2009;9(1):25-31.; DOI: https://doi.org/10.5515/JKIEES.2009.9.1.025
Crossref 1; PDF

A 0.18-μm CMOS UWB LNA Combined with High-Pass-Filter: Jeong-Yeon Kim, Chang-Wan Kim; J. Electromagn. Eng. Sci. 2009;9(1):7-11.; DOI: https://doi.org/10.5515/JKIEES.2009.9.1.007; PDF

A Quadrature VCO Exploiting Direct Back-Gate Second Harmonic Coupling: Nam-Jin Oh; J. Electromagn. Eng. Sci. 2008;8(3):134-138.; DOI: https://doi.org/10.5515/JKIEES.2008.8.3.134; PDF

CMOS Direct-Conversion RF Front-End Design for 5-GHz WLAN: Nam-Jin Oh; J. Electromagn. Eng. Sci. 2008;8(3):114-118.; DOI: https://doi.org/10.5515/JKIEES.2008.8.3.114
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A 0.13-μm CMOS RF Tx/Rx Switch for Wideband Applications: Jeong-Yeon Kim, Chang-Wan Kim; J. Electromagn. Eng. Sci. 2008;8(3):96-99.; DOI: https://doi.org/10.5515/JKIEES.2008.8.3.096; PDF

A 3~5 GHz UWB Up-Mixer Block Using 0.18-μm CMOS Technology: Chang-Wan Kim; J. Electromagn. Eng. Sci. 2008;8(3):91-95.; DOI: https://doi.org/10.5515/JKIEES.2008.8.3.091; PDF

A MB-OFDM UWB 0.18-μm CMOS RF Front-End Receiver: Chang-Wan Kim; J. Electromagn. Eng. Sci. 2008;8(1):34-40.; DOI: https://doi.org/10.5515/JKIEES.2008.8.1.034
Crossref 1; PDF

An Ultra Wideband Low Noise Amplifier in 0.18 μm RF CMOS Technology: Ji-Hak Jung, Tae-Yeoul Yun, Jae-Hoon Choi; J. Electromagn. Eng. Sci. 2005;5(3):112-116.; PDF

Multi-Gbit/s Digital I/O Interface Based on RF-Modulation and Capacitive Coupling: Hyunchol Shin; J. Electromagn. Eng. Sci. 2004;4(2):56-62.; PDF

A 1.8 GHz SiGe HBT VCO using 0.5μm BiCMOS Process: Ja-Yol Lee, Sang-Heung Lee, Jin-Young Kang, Kyu-Hwan Shim, Kyoung-Ik Cho, Seung-Hyeub Oh; J. Electromagn. Eng. Sci. 2003;3(1):29-34.; PDF

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