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J Electromagn Eng Sci > Volume 12(2); 2012 > Article
Journal of Electromagnetic Engineering and Science 2012;12(2):171-175.
DOI: https://doi.org/10.5515/JKIEES.2012.12.2.171   
A New Broadband Microstrip-to-SIW Transition Using Parallel HMSIW
Dae-Keun Cho, Hai-Young Lee
Microwave Application Laboratory, Ajou University
In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.
Key words: Broadband, Half-Mode Substrate Integrated Waveguide, Substrate Integrated Waveguide, Transition
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