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GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications
Jun-Chul Park, Dong-Su Kim, Chan-Sei Yoo, Woo-Sung Lee, Jong-Gwan Yook, Sang-Hyun Chun, Jong-Heon Kim, Cheol-Koo Hahn
J Korean inst Electromagn Sci. 2011;11(1):16-26. DOI: https://doi.org/10.5515/JKIEES.2011.11.1.016
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Citations to this article as recorded by
 Design of a 2.6 GHz GaN-HEMT Doherty Power Amplifier IC for Small-Cell Base Station Systems
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The Journal of Korean Institute of Electromagnetic.2016; 27(2): 108. CrossRef GaN HEMT‐based hybrid current‐mode class‐S power amplifier for 955 MHz LTE signal
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