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A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz: Junghwan Yoo, Jungsoo Kim, Jongwon Yun, Mehmet Kaynak, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2022;22(2):114-121. Published online March 31, 2022; DOI: https://doi.org/10.26866/jees.2022.2.r.67
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Comparison of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators: Doyoon Kim, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2018;18(2):141-143. Published online April 30, 2018; DOI: https://doi.org/10.26866/jees.2018.18.2.141
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CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies: Junghwan Yoo, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2017;17(2):98-104.; DOI: https://doi.org/10.5515/JKIEES.2017.17.2.98
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A CMOS 180-GHz Signal Source with an Integrated Frequency Doubler: Jungsoo Kim, Myeong-Gyo Seo, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2016;16(4):229-231.; DOI: https://doi.org/10.5515/JKIEES.2016.16.4.229
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A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology: Seungyoon Jung, Jongwon Yun, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2015;15(4):232-238.; DOI: https://doi.org/10.5515/JKIEES.2015.15.4.232
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A Wideband H-Band Image Detector Based on SiGe HBT Technology: Daekeun Yoon, Mehmet Kaynak, Bernd Tillack, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2015;15(1):59-62.; DOI: https://doi.org/10.5515/JKIEES.2015.15.1.59
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